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Waveguiding-assisted random lasing in epitaxial ZnO thin film

Abstract : Zinc oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm2). Time dependent spectral analysis plus gain measurements of single-shot, side-emission spectra pumped with a nitrogen laser revealed random lasing indicative of the presence of self-forming laser cavities. It is suggested that random lasing in an epitaxial system rather than a three-dimensional configuration of disordered scattering elements was due to waveguiding in the film. Waveguiding causes light to be amplified within randomly formed closed-loops acting as lasing cavities.
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Submitted on : Monday, February 10, 2020 - 3:11:54 PM
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P.-H. Dupont, Christophe Couteau, D. J. Rogers, F. Hosseini Teherani, Gilles Lerondel. Waveguiding-assisted random lasing in epitaxial ZnO thin film. Applied Physics Letters, American Institute of Physics, 2010, 97 (26), pp.261109. ⟨10.1063/1.3527087⟩. ⟨hal-02473076⟩



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