Waveguiding-assisted random lasing in epitaxial ZnO thin film - Université de technologie de Troyes Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2010

Waveguiding-assisted random lasing in epitaxial ZnO thin film

Résumé

Zinc oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm2). Time dependent spectral analysis plus gain measurements of single-shot, side-emission spectra pumped with a nitrogen laser revealed random lasing indicative of the presence of self-forming laser cavities. It is suggested that random lasing in an epitaxial system rather than a three-dimensional configuration of disordered scattering elements was due to waveguiding in the film. Waveguiding causes light to be amplified within randomly formed closed-loops acting as lasing cavities.

Dates et versions

hal-02473076 , version 1 (10-02-2020)

Identifiants

Citer

P.-H. Dupont, Christophe Couteau, D. J. Rogers, F. Hosseini Teherani, Gilles Lerondel. Waveguiding-assisted random lasing in epitaxial ZnO thin film. Applied Physics Letters, 2010, 97 (26), pp.261109. ⟨10.1063/1.3527087⟩. ⟨hal-02473076⟩

Collections

CNRS UTT UTT-L2N
8 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More