Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure - Université de technologie de Troyes Access content directly
Patents Year : 2016

Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure

Gilles Lerondel
Laboratoire de Nanotechnologie et d'Instrumentation Optique
CV
Laurent Divay
  • Function : Author

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Optics / Photonic

Jean-Baptiste VU VAN  : Connect in order to contact the contributor

https://hal-utt.archives-ouvertes.fr/hal-03141938

Submitted on : Monday, February 15, 2021-4:07:55 PM

Last modification on : Friday, March 24, 2023-2:53:20 PM

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hal-03141938 , version 1 (15-02-2021)

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  • HAL Id : hal-03141938 , version 1

Cite

Gilles Lerondel, Laurent Divay. Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure. Japan, Patent n° : JP6014722 (B2). 2016. ⟨hal-03141938⟩

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