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Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure

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https://hal-utt.archives-ouvertes.fr/hal-03141938
Contributor : Jean-Baptiste Vu Van Connect in order to contact the contributor
Submitted on : Monday, February 15, 2021 - 4:07:55 PM
Last modification on : Wednesday, September 15, 2021 - 3:03:42 PM

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  • HAL Id : hal-03141938, version 1

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UTT | CNRS

Citation

Gilles Lerondel, Laurent Divay. Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure. Japan, Patent n° : JP6014722 (B2). 2016. ⟨hal-03141938⟩

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