Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure - Université de technologie de Troyes Access content directly
Patents Year : 2016

Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure

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Dates and versions

hal-03141938 , version 1 (15-02-2021)

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  • HAL Id : hal-03141938 , version 1

Cite

Gilles Lerondel, Laurent Divay. Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure. Japan, Patent n° : JP6014722 (B2). 2016. ⟨hal-03141938⟩

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