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Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure

Gilles Lerondel 1 Laurent Divay 
1 LNIO - Laboratoire de Nanotechnologie et d'Instrumentation Optique
ICD - Institut Charles Delaunay
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https://hal-utt.archives-ouvertes.fr/hal-03141938
Contributor : Jean-Baptiste VU VAN Connect in order to contact the contributor
Submitted on : Monday, February 15, 2021 - 4:07:55 PM
Last modification on : Sunday, June 26, 2022 - 4:46:51 AM

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  • HAL Id : hal-03141938, version 1

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Gilles Lerondel, Laurent Divay. Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure. Japan, Patent n° : JP6014722 (B2). 2016. ⟨hal-03141938⟩

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