Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure - Archive ouverte HAL Access content directly
Patents Year : 2016

Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure

(1) ,
1
Gilles Lerondel
Laboratoire de Nanotechnologie et d'Instrumentation Optique
CV
Laurent Divay
  • Function : Author

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Engineering Sciences [physics] Optics / Photonic

Jean-Baptiste VU VAN  : Connect in order to contact the contributor

https://hal-utt.archives-ouvertes.fr/hal-03141938

Submitted on : Monday, February 15, 2021-4:07:55 PM

Last modification on : Sunday, June 26, 2022-4:46:51 AM

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hal-03141938 , version 1 (15-02-2021)

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  • HAL Id : hal-03141938 , version 1

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Gilles Lerondel, Laurent Divay. Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure. Japan, Patent n° : JP6014722 (B2). 2016. ⟨hal-03141938⟩

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