Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure - Archive ouverte HAL Access content directly
Patents Year : 2016

Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure

(1) ,
1
Not file

Dates and versions

hal-03141938 , version 1 (15-02-2021)

Identifiers

  • HAL Id : hal-03141938 , version 1

Cite

Gilles Lerondel, Laurent Divay. Method of making film or wafer composed of material of metal oxide type or semiconductor type to have nanostructure. Japan, Patent n° : JP6014722 (B2). 2016. ⟨hal-03141938⟩

Collections

CNRS UTT
9 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More