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Patents Year : 2012

Method of nanostructuring a film or a wafer of material of the metal oxide or semiconductor type

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hal-03141931 , version 1 (15-02-2021)

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  • HAL Id : hal-03141931 , version 1

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Gilles Lerondel, Laurent Divay. Method of nanostructuring a film or a wafer of material of the metal oxide or semiconductor type. China, Patent n° : CN102428215 (A). 2012. ⟨hal-03141931⟩

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