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Method of nanostructuring a film or a wafer of material of the metal oxide or semiconductor type

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https://hal-utt.archives-ouvertes.fr/hal-03141931
Contributor : Jean-Baptiste Vu Van Connect in order to contact the contributor
Submitted on : Monday, February 15, 2021 - 4:05:10 PM
Last modification on : Wednesday, September 15, 2021 - 3:03:35 PM

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  • HAL Id : hal-03141931, version 1

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UTT | CNRS

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Gilles Lerondel, Laurent Divay. Method of nanostructuring a film or a wafer of material of the metal oxide or semiconductor type. China, Patent n° : CN102428215 (A). 2012. ⟨hal-03141931⟩

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