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Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

Hyun Jeong 1 Hyeon Jun Jeong 2 Hye Min Oh 2 Chang-Hee Hong 3 Eun-Kyung Suh 3 Gilles Lerondel 1 Mun Seok Jeong 2 
1 LNIO - Laboratoire de Nanotechnologie et d'Instrumentation Optique
ICD - Institut Charles Delaunay
2 SKKU - Sungkyunkwan University [Suwon]
3 Chonbuk National University
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Conference papers
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https://hal-utt.archives-ouvertes.fr/hal-02866184
Contributor : Jean-Baptiste VU VAN Connect in order to contact the contributor
Submitted on : Friday, June 12, 2020 - 12:16:48 PM
Last modification on : Sunday, June 26, 2022 - 4:46:30 AM

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  • HAL Id : hal-02866184, version 1

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Hyun Jeong, Hyeon Jun Jeong, Hye Min Oh, Chang-Hee Hong, Eun-Kyung Suh, et al.. Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes. SPIE Optics and Photonics, Nanophotonic Materials XII, Aug 2015, San Diego, United States. ⟨hal-02866184⟩

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