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Model for infrared reflectivity reveals the effect of Ge amount on the interface state and the crystalline quality of the 3C-SiC/Ge/Si heterostructure

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https://hal-utt.archives-ouvertes.fr/hal-02526131
Contributor : Jean-Baptiste Vu Van Connect in order to contact the contributor
Submitted on : Tuesday, March 31, 2020 - 1:11:26 PM
Last modification on : Wednesday, September 15, 2021 - 3:03:57 PM

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  • HAL Id : hal-02526131, version 1

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Michel Kazan, Aurélien Bruyant, Pascal Royer, Laurent Arnaud, Christophe Couteau, et al.. Model for infrared reflectivity reveals the effect of Ge amount on the interface state and the crystalline quality of the 3C-SiC/Ge/Si heterostructure. European Material Research Society 2010, Jun 2010, Strasbourg, France. ⟨hal-02526131⟩

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