Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs - Archive ouverte HAL Access content directly
Conference Papers Year : 2006

Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs

(1) , (1) , (1) , (1) , (1) , (2) , (3) , (3) , (3) , (4) , (4) , (4) , (5) , (5) , (5) , (5) , (5)
1
2
3
4
5
G. Bourgeois
  • Function : Author
R. Stevens
  • Function : Author
R. Hamelin
  • Function : Author

Abstract

In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.
Not file

Dates and versions

hal-02495762 , version 1 (02-03-2020)

Identifiers

Cite

Emilie Pougeoise, Philippe Gilet, Philippe Grosse, A. Poncet, Alexei Chelnokov, et al.. Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs. SPIE Photonics Europe, 2006, Strasbourg, France. pp.61850U, ⟨10.1117/12.662118⟩. ⟨hal-02495762⟩
40 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More