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Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs

Abstract : In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.
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https://hal-utt.archives-ouvertes.fr/hal-02495762
Contributor : Jean-Baptiste Vu Van <>
Submitted on : Monday, March 2, 2020 - 2:53:08 PM
Last modification on : Thursday, June 11, 2020 - 5:04:10 PM

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Emilie Pougeoise, Philippe Gilet, Philippe Grosse, A. Poncet, Alexei Chelnokov, et al.. Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs. SPIE Photonics Europe, 2006, Strasbourg, France. pp.61850U, ⟨10.1117/12.662118⟩. ⟨hal-02495762⟩

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