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Journal articles
Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED
Hyun Jeong
1, 2
Seung Yol Jeong
3
Doo Jae Park
1
Hyeon Jun Jeong
1
Sooyeon Jeong
3
Joong Tark Han
3
Hee Jin Jeong
3
Sunhye Yang
3
Ho Young Kim
3, 1
Kang-Jun Baeg
3
Sae June Park
4
Yeong Hwan Ahn
4
Eun-Kyung Suh
5
Geon-Woong Lee
3
Young Hee Lee
1
Mun Seok Jeong
1
1
SKKU - Sungkyunkwan University [Suwon] (Suwon Gyeonggi-Do 440-746 - South Korea)
2
LNIO - Laboratoire de Nanotechnologie et d'Instrumentation Optique (12 rue Marie Curie - BP 2060 10010 TROYES CEDEX - France)
- ICD - Institut Charles Delaunay (12, rue Marie Curie BP 2060 - 10010 Troyes Cedex - France)
- UTT - Université de Technologie de Troyes (12 rue Marie Curie CS 42060 10004 TROYES CEDEX - France)
- CNRS - Centre National de la Recherche Scientifique : UMR6281 (France)
3
Korea Electrotechnology Research Institute (South Korea)
4
Ajou University (South Korea)
5
Chonbuk National University (567 Baekje-daero, deokjin-gnu; Jeollabuk-do 561-756 - South Korea)
Abstract : GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.
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https://hal-utt.archives-ouvertes.fr/hal-02453313
Contributor : Daniel Gavrysiak <>
Submitted on : Thursday, January 23, 2020 - 5:21:13 PM
Last modification on : Friday, January 24, 2020 - 2:00:17 AM
Contributor : Daniel Gavrysiak <>
Submitted on : Thursday, January 23, 2020 - 5:21:13 PM
Last modification on : Friday, January 24, 2020 - 2:00:17 AM
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- HAL Id : hal-02453313, version 1
- DOI : 10.1038/srep07778
Citation
Hyun Jeong, Seung Yol Jeong, Doo Jae Park, Hyeon Jun Jeong, Sooyeon Jeong, et al.. Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED. Scientific Reports, Nature Publishing Group, 2015, 5 (1), ⟨10.1038/srep07778⟩. ⟨hal-02453313⟩
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