Wafer‐level Fabrication of sub 10 nm Gap Hot Spots for Highly Sensitive and Quantification of Biomolecules by SER and Fluorescence Spectroscopies

Rishabh Rastogi; Pierre-Michel Adam; Sivashankar Krishnamoorthy

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Wafer‐level Fabrication of sub 10 nm Gap Hot Spots for Highly Sensitive and Quantification of Biomolecules by SER and Fluorescence Spectroscopies

(1) , (2) , (1)

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Rishabh Rastogi

Function : Author

Luxembourg Institute of Science and Technology

Pierre-Michel Adam

Function : Author

Lumière, nanomatériaux et nanotechnologies

Sivashankar Krishnamoorthy

Function : Author
PersonId : 1049023

Luxembourg Institute of Science and Technology

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

pierre-michel adam : Connect in order to contact the contributor

https://hal-utt.archives-ouvertes.fr/hal-02427958

Submitted on : Saturday, January 4, 2020-4:52:52 PM

Last modification on : Friday, March 24, 2023-2:53:14 PM

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hal-02427958 , version 1 (04-01-2020)

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HAL Id : hal-02427958 , version 1

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Rishabh Rastogi, Pierre-Michel Adam, Sivashankar Krishnamoorthy. Wafer‐level Fabrication of sub 10 nm Gap Hot Spots for Highly Sensitive and Quantification of Biomolecules by SER and Fluorescence Spectroscopies. 4th International Conference on Enhanced Spectroscopies (ICES4), Jun 2019, London, Canada. ⟨hal-02427958⟩

Wafer‐level Fabrication of sub 10 nm Gap Hot Spots for Highly Sensitive and Quantification of Biomolecules by SER and Fluorescence Spectroscopies

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