Metal–Insulator–Semiconductor Diode Consisting of Two-Dimensional Nanomaterials
Résumé
We present a novel metal–insulator–semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I–V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p–n junction and the metal–semiconductor diodes made of layered materials. The I–V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.