Highly efficient interfacing of silicon-on-insulator and localized surface plasmon waveguides - Archive ouverte HAL Access content directly
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Highly efficient interfacing of silicon-on-insulator and localized surface plasmon waveguides

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Abstract

Plasmonics implementation in optical circuits and interconnects requires interfacing with dielectric optical waveguides. We show here metallic nanoparticles chain mode excitation from SOI waveguide with a record distance lower than 600 nm at telecom wavelength.
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Dates and versions

hal-02360186 , version 1 (12-11-2019)

Identifiers

  • HAL Id : hal-02360186 , version 1

Cite

Mickaël Février, Philippe Gogol, Abdelhanin Aassime, Robert Megy, Alexandre Bondi, et al.. Highly efficient interfacing of silicon-on-insulator and localized surface plasmon waveguides. OFC/NFOEC, Mar 2012, Los Angeles, United States. ⟨hal-02360186⟩
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