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GaAs/AlGaAs Nanowire Photodetector

Abstract : We demonstrate an efficient core–shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal–semiconductor–metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation, enhancing photosensitivity. The spectral photoconductive response shows that the nanowire supports resonant optical modes in the near-infrared region, which lead to large photocurrent density in agreement with the predictions of electromagnetic and transport computational models. The single nanowire photodetector shows a remarkable peak photoresponsivity of 0.57 A/W, comparable to large-area planar GaAs photodetectors on the market, and a high detectivity of 7.2 × 1010 cm·Hz1/2/W at λ = 855 nm. This is promising for the design of a new generation of highly sensitive single nanowire photodetectors by controlling the optical mode confinement, bandgap, density of states, and electrode engineering.
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Submitted on : Wednesday, November 6, 2019 - 2:52:53 PM
Last modification on : Friday, March 27, 2020 - 4:18:03 PM

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Xing Dai, Sen Zhang, Zilong Wang, Giorgio Adamo, Hai Liu, et al.. GaAs/AlGaAs Nanowire Photodetector. Nano Letters, American Chemical Society, 2014, 14 (5), pp.2688-2693. ⟨10.1021/nl5006004⟩. ⟨hal-02351651⟩

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