Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes - Université de technologie de Troyes Access content directly
Journal Articles Scientific Reports Year : 2015

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

Abstract

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results.

Dates and versions

hal-02296859 , version 1 (25-09-2019)

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Hyun Jeong, Hyeon Jun Jeong, Hye Min Oh, Chang-Hee Hong, Eun-Kyung Suh, et al.. Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes. Scientific Reports, 2015, 5 (1), ⟨10.1038/srep09373⟩. ⟨hal-02296859⟩

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