Wafer‐level Fabrication of sub 10 nm Gap Hot Spots for Highly Sensitive and Quantification of Biomolecules by Surface Enhanced Raman and Fluorescence Spectroscopies - Archive ouverte HAL Access content directly
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Wafer‐level Fabrication of sub 10 nm Gap Hot Spots for Highly Sensitive and Quantification of Biomolecules by Surface Enhanced Raman and Fluorescence Spectroscopies

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hal-02291158 , version 1 (18-09-2019)

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  • HAL Id : hal-02291158 , version 1

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Rishabh Rastogi, Pierre-Michel Adam, Sivashankar Krishnamoorthy. Wafer‐level Fabrication of sub 10 nm Gap Hot Spots for Highly Sensitive and Quantification of Biomolecules by Surface Enhanced Raman and Fluorescence Spectroscopies. 4th International Conference on Enhanced Spectrocopies, ICES 4, Jun 2019, London (Ontario), Canada. ⟨hal-02291158⟩

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