Study of the growth time effect on the structural, morphological and electrical characteristics of ZnO/p-Si heterojunction diodes grown by sol-gel assisted chemical bath deposition method

Abstract : Well-aligned ZnO nanorods (NRs) have been synthesized by chemical bath deposition (CBD) method on (100) p-type Silicon substrate for various growth times. ZnO seed layers have been pre-coated on Si by sol-gel spin-coating process. The effect of growth time on structural, morphological and electrical properties of ZnO NRs were systematically investigated by X-Ray diffraction, scanning electron microscopy and current-voltage measurements at room temperature. SEM images illustrated that vertical, well-aligned, uniformly distributed, dense ZnO NRs were observed to grow on the Si substrate. Moreover, the growth rate decreases dramatically as the deposition time increased. X-ray diffraction pattern showed that the synthesized ZnO NRs have hexagonal wurtzite structure and exhibit a preferred orientation along the c-axis. The current–voltage analysis provided information about electrical parameters of n-ZnO NRs/p-Si heterojunction diode as a function of the growth time. The results showed an increase in the barrier height ϕb and a decrease in the ideality factor n, as the length of the NRs increased. More details about I–V characteristics measured under illumination and in the dark are also reported.
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https://hal-utt.archives-ouvertes.fr/hal-02290105
Contributor : Jean-Baptiste Vu Van <>
Submitted on : Tuesday, September 17, 2019 - 1:51:06 PM
Last modification on : Wednesday, September 18, 2019 - 1:28:49 AM

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Wided Chebil, Anisha Gokarna, Afif Fouzri, Nejeh Hamdaoui, Komla Nomenyo, et al.. Study of the growth time effect on the structural, morphological and electrical characteristics of ZnO/p-Si heterojunction diodes grown by sol-gel assisted chemical bath deposition method. Journal of Alloys and Compounds, Elsevier, 2019, 771, pp.448-455. ⟨10.1016/j.jallcom.2018.08.280⟩. ⟨hal-02290105⟩

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